METHOD FOR FORMING ELECTRODE FOR STORING CHARGE IN SEMICONDUCTOR DEVICE OF CYLINDER STRUCTURE

摘要

PURPOSE: A method for forming an electrode for storing charge in a semiconductor device of cylinder structure is provided to form the electrode for storing charge reliably by reducing the speed of etching in the contact surface for bringing an oxide film into contact with a metal film. CONSTITUTION: A sacrificial oxide film pattern(24) in which an electrode for storing charge is open is formed on a silicon substrate(20). The surface of the sacrificial oxide film pattern(24) is plasma-processed by using gas including nitrogen. A metal pattern(26) for the electrode for storing charge is formed along the surface of the whole structure. The metal pattern(26) placed on the upper side of the sacrificial oxide film pattern(24) is removed. The sacrificial oxide film pattern(24) is removed by a wet etching.