| 摘要 |
PURPOSE: A method for manufacturing an interconnection of a semiconductor device is provided to prevent a halation phenomenon by patterning a photoresist layer on an oxide layer wherein light is less reflected than metal while a hard mask using the oxide layer is used, and to prevent polymer from remaining after forming a metal interconnection by increasing an etch rate of a mask and a metal layer. CONSTITUTION: An insulating layer(22) is deposited on a semiconductor substrate(21) having a device. A metal barrier layer(23), an aluminum layer(24) and an anti-reflecting metal layer(25) are sequentially formed on the resultant structure. An oxide layer(26) is deposited on the anti-reflecting metal layer. A photoresist layer is applied on the resultant structure, and pattern according to a metal interconnection. The oxide layer is etched by using the patterned photoresist layer as a mask. The anti-reflecting metal layer, the aluminum layer and the metal barrier layer are sequentially etched to form an interconnection by using the patterned oxide layer as a hard mask.
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