| 摘要 |
PURPOSE: A capacitor pattern array is provided to secure an alignment margin with a storage contact and to obtain a more greater capacitance. CONSTITUTION: The capacitor pattern array includes a plurality of capacitor patterns(22) arrayed within a capacitor fence(20). Each of the capacitor patterns(22) covers the storage contact, which is formed thereunder and connected to an impurity region of a transistor in a wafer. Particularly, each capacitor pattern(22) has a crisscross shape. Furthermore, the capacitor patterns(22) are arranged in columns and rows, and disposed in zigzag along the columns. Accordingly, the capacitor pattern array of high density and the storage contact with increased surface area are obtained.
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