| 摘要 |
A polishing composition for silicon wafers having a resistivity of at most 0.1 OMEGA.cm, comprising water, an abrasive and, as an additive, at least one compound selected from the group consisting of an alkali metal hydroxide, an alkali metal carbonate, an alkali metal hydrogencarbonate, a quaternary ammonium salt, a peroxide and a peroxo acid compound.
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