| 发明名称 |
METHOD FOR FORMING TiSiN FILM, DIFFUSION PREVENTIVE FILM COMPRISING TiSiN FILM, SEMICONDUCTOR DEVICE AND ITS PRODUCTION METHOD, AND APPARATUS FOR FORMING TiSiN FILM |
| 摘要 |
<p>A TiSiN film of a barrier metal for a semiconductor device is formed by plasma CVD or thermal CVD to prevent diffusion of Cu. When the film is formed by thermal CVD, a TiCl4 gas, silane gas, and an NH3 gas are used as the source gas. When the film is formed by plasma CVD, a TiCl4 gas, a silane gas, an H2 gas, and an N2 gas are used as the source gas.</p> |
| 申请公布号 |
WO0142529(A1) |
申请公布日期 |
2001.06.14 |
| 申请号 |
WO1999JP06898 |
申请日期 |
1999.12.09 |
| 申请人 |
TOKYO ELECTRON LIMITED;OTSUKI, HAYASHI;TADA, KUNIHIRO;MATSUSE, KIMIHIRO |
发明人 |
OTSUKI, HAYASHI;TADA, KUNIHIRO;MATSUSE, KIMIHIRO |
| 分类号 |
C23C16/34;C23C16/44;C23C16/455;H01L21/02;H01L21/28;H01L21/285;H01L21/768;H01L21/8242;H01L23/485;H01L27/108;H01L29/49;(IPC1-7):C23C16/34;H01L27/04;H01L27/10;H01L29/423 |
主分类号 |
C23C16/34 |
| 代理机构 |
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