| 发明名称 |
Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by the same |
| 摘要 |
A method for depositing a rough polysilicon film on a substrate is disclosed. The method includes introducing the reactant gases argon and silane into a deposition chamber and enabling and disabling a plasma at various times during the deposition process.
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| 申请公布号 |
US2001003670(A1) |
申请公布日期 |
2001.06.14 |
| 申请号 |
US20000732624 |
申请日期 |
2000.12.08 |
| 申请人 |
SANDHU GURTEJ S.;DOAN TRUNG T. |
发明人 |
SANDHU GURTEJ S.;DOAN TRUNG T. |
| 分类号 |
C23C16/24;C23C16/515;H01L21/02;H01L21/285;(IPC1-7):H01L21/44 |
主分类号 |
C23C16/24 |
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