发明名称 |
Semiconducting ceramic material and electronic part employing the same |
摘要 |
The semiconducting ceramic material of the present invention containing BaTiO3 and having a positive temperature coefficient of resistance is endowed with high withstand voltage. In the semiconducting ceramic material, a boundary temperature defined at the boundary between a first temperature range and a second temperature range is 180° C. or more (e.g., 370° C.) higher than the Curie temperature, wherein the first temperature range is higher than the Curie temperature and the ceramic material has a positive temperature coefficient of resistance in the range, and the second temperature range is higher than the first temperature range and the ceramic material has a negative temperature coefficient of resistance in the range.
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申请公布号 |
US2001003361(A1) |
申请公布日期 |
2001.06.14 |
申请号 |
US20000730133 |
申请日期 |
2000.12.05 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
NIIMI HIDEAKI;ANDO AKIRA;KAWAMOTO MITSUTOSHI;KODAMA MASAHIRO |
分类号 |
H01C7/02;C04B35/468;(IPC1-7):H01B1/00 |
主分类号 |
H01C7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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