发明名称 |
LIGHT-EMITTING DEVICE |
摘要 |
<p>A light-emitting device having an active layer made of a nitride semiconductor containing In, especially a light-emitting device emitting a light of long wavelength (above 550 nm) and having an improved output power, wherein the active layer is formed between an n-type semiconductor layer and a p-type semiconductor layer and includes a well layer made of Inx1Ga1-x1N (x1>0) containing In and a first barrier layer formed on the well layer and made of Aly2Ga1-y2N (y2>0) containing Al.</p> |
申请公布号 |
WO0143206(A1) |
申请公布日期 |
2001.06.14 |
申请号 |
WO2000JP08768 |
申请日期 |
2000.12.12 |
申请人 |
NICHIA CORPORATION;MORITA, DAISUKE;YAMADA, MOTOKAZU |
发明人 |
MORITA, DAISUKE;YAMADA, MOTOKAZU |
分类号 |
H01L33/06;H01L33/12;H01L33/32;H01S5/323;H01S5/343;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|