| 摘要 |
Comparing with, for example, a semiconductor device having the configuration in which the logic circuit and the DRAM cell circuit are consolidated, a semiconductor device in which an analog capacity element is installed without substantially increasing the number of the steps is provided. An analog capacity element to be installed in the DNA ell circuit has a structure in which a lower electrode 5, a side-wall insulation film 9, and a bit line are formed using the same materials and the same patterns as those of a gate electrode 4, a dielectric film 10, and bit line, respectively.
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