| 摘要 |
<p>A method of fabricating a substrate suitable for the growth of a sequence of epitaxial layers thereon for the production of an optoelectronic device, wherein said sequence of layers has a first lattice constant and said substrate has a substrate lattice constant equal to or slightly different from said first lattice constant is characterised by the steps of selecting an auxiliary substrate (e.g. GaAs wafer) having a lattice equal to or slightly different from said first lattice constant and suitable for the growth of said epitaxial layers thereon, of bonding said auxiliary substrate onto a support substrate (for example GaP), having at least one desirable physical property but a lattice constant different from said first lattice constant, for example a support substrate transparent for the radiation of interest in the optoelectronic device, and of reducing the thickness of said auxialiary substrate to a smaller value. In an alternative, an epitaxial layer having a desired lattice constant for growth of the layer sequence of the desired optoelectronic device is grown onto the auxiliary substrate and, after bonding to the support substrate, the auxiliary substrate is fully removed.</p> |
