| 发明名称 |
High purity, siliconized silicon carbide having high thermal shock resistance |
| 摘要 |
This invention is a high strength, thermal shock resistant, high purity siliconized silicon carbide material made from siliconizing a converted graphite SiC body having at least 71 vol % silicon carbide therein.
|
| 申请公布号 |
US2001003620(A1) |
申请公布日期 |
2001.06.14 |
| 申请号 |
US20000748568 |
申请日期 |
2000.12.21 |
| 申请人 |
DUBOTS DOMINIQUE;HAERLE ANDREW |
发明人 |
DUBOTS DOMINIQUE;HAERLE ANDREW |
| 分类号 |
C04B41/88;C04B35/573;C04B41/85;H01L21/26;H01L21/31;H01L21/324;(IPC1-7):C04B35/565;C04B35/577;F27D5/00 |
主分类号 |
C04B41/88 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
