| 发明名称 |
Cobalt silicide etch process and apparatus |
| 摘要 |
Method and apparatus for etching a silicide stack including etching the silicide layer at a temperature elevated from that used to etch the rest of the layers in order to accomplish anisotropic etch.
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| 申请公布号 |
US2001003676(A1) |
申请公布日期 |
2001.06.14 |
| 申请号 |
US20010760402 |
申请日期 |
2001.01.12 |
| 申请人 |
TEGAL CORPORATION |
发明人 |
MARKS STEVEN;JERDE LESLIE G.;DEORNELLAS STEPHEN P. |
| 分类号 |
H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/3213 |
| 代理机构 |
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代理人 |
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| 地址 |
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