| 摘要 |
A etch stop layer for use in a silicon oxide dry fluorine etch process is made of silicon nitride with hydrogen incorporated in it either in the form of N-H bonds, O-H bonds, or entrapped free hydrogen. The etch stop layer is made by either increasing the NH3 flow, decreasing the SiH4 flow, decreasing the nitrogen flow, or all three, in a standard PECVD silicon nitride fabrication process. The etch stop can alternatively be made by pulsing the RF field in either a PECVD process or an LPCVD process.
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