| 摘要 |
PURPOSE: A row redundant circuit of a semiconductor memory is provided to share one fuse ROM in many banks by using each back selector, and reduces an integration degree and redundant repairing efficiency. CONSTITUTION: A fuse(1) receives many address signals and an inverting address signal, and stores an address to be repaired according to an inner fuse state. PMOS transistor is controlled by a predecoding signal, and precharges an output state of the fuse with an inner power voltage value. Many pull-up PMOS transistor are controlled by the predecoding signal. Many pull-down NMOS transistor are controlled by an address signal of a high potential and an inverting address signal. A bank selector(2) connects each of pull-up PMOS transistor to a drain of each pull-down NMOS transistor, and generates a bank selection signal at a contact point of each pull-up PMOS transistor. A bank selector(2) generates many bank selection signals. A bank selection/repair controller(3) combines an output state of the fuse with each bank selection signal, and outputs many bank redundant determining signal for determining a repairing of a specific bank.
|
