| 摘要 |
The invention relates to a controllable semiconductor switching element that blocks in both directions. Said semiconductor switching element comprises a first conduction region (12) and a second conduction region (14, 16) of a first type of conductivity (n, n+), a blocking region (18; 58) of a second type of conductivity (p) which is arranged between the first and second conduction regions (12, 14, 16), and a control electrode (20) which is arranged opposite the blocking region (18; 58) in an insulated manner. A recombination region is configured in the blocking region (18) and is comprised of a material that promotes a recombination of charge carriers of the first and second type of conductivity.
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