发明名称 |
Substrate for crystal growth, has base on which crystal system containing separate crystals which are different from epitaxial crystal layer, and epitaxial crystal layer having island-like crystals, are formed |
摘要 |
The substrate (11) consists of a base for growing an epitaxial crystal layer (15). A crystal system containing separate crystals which are different from the epitaxial crystal layer, is formed on the substrate. The epitaxial crystal layer has a single crystal layer containing island-like crystals. An Independent claim is also included for the manufacture of the substrate for crystal growth. A buffer layer of the same crystal system is provided as the epitaxial crystal layer. Wet etching of a part of the buffer layer is performed.
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申请公布号 |
DE10051632(A1) |
申请公布日期 |
2001.06.13 |
申请号 |
DE20001051632 |
申请日期 |
2000.10.18 |
申请人 |
NEC CORPORATION, TOKIO/TOKYO |
发明人 |
SUNAKAWA, HARUO;MATSUMOTO, YOSHISHIGE;USUI, AKIRA |
分类号 |
H01L21/306;C30B23/02;C30B25/02;C30B25/18;C30B29/38;H01L21/20;H01L21/205;(IPC1-7):C30B23/02;C30B33/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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