发明名称 Substrate for crystal growth, has base on which crystal system containing separate crystals which are different from epitaxial crystal layer, and epitaxial crystal layer having island-like crystals, are formed
摘要 The substrate (11) consists of a base for growing an epitaxial crystal layer (15). A crystal system containing separate crystals which are different from the epitaxial crystal layer, is formed on the substrate. The epitaxial crystal layer has a single crystal layer containing island-like crystals. An Independent claim is also included for the manufacture of the substrate for crystal growth. A buffer layer of the same crystal system is provided as the epitaxial crystal layer. Wet etching of a part of the buffer layer is performed.
申请公布号 DE10051632(A1) 申请公布日期 2001.06.13
申请号 DE20001051632 申请日期 2000.10.18
申请人 NEC CORPORATION, TOKIO/TOKYO 发明人 SUNAKAWA, HARUO;MATSUMOTO, YOSHISHIGE;USUI, AKIRA
分类号 H01L21/306;C30B23/02;C30B25/02;C30B25/18;C30B29/38;H01L21/20;H01L21/205;(IPC1-7):C30B23/02;C30B33/00 主分类号 H01L21/306
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