| 摘要 |
Microelectronic structure comprises an adhesion layer (20) arranged between a base substrate (5) and a barrier layer (25). The adhesion layer contains titanium, zirconium, hafnium, cerium, tantalum, vanadium, chromium, niobium, tantalum nitride, titanium nitride, tantalum silicide nitride and/or tungsten silicide. An Independent claim is also included for a process for the production of a microelectronic structure comprising applying an adhesion layer to the substrate by sputtering or CVD, and then applying the barrier layer to the adhesion layer. Preferred Features: The substrate consists partially of an insulating material and has an opening filled with conducting material.
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