Surface treatment anneal of silicon-oxy-carbide semiconductor surface layer

摘要

A method of surface treating a semiconductor surface and semiconductor article is disclosed. A deposited semiconductor surface layer is treated and annealed within an alkyl environment of a chemical vapor deposition chamber to passivate the semiconductor surface layer by bonding with the silicon and attaching alkyl terminating chemical species on the surface of the semiconductor surface layer to aid in dehydroxylating the surface. The semiconductor surface layer comprises a polysilicon-oxy-carbide surface layer having a carbon content ranging from about 5% to about 20% at the molecular level and a dielectric constant of about 2.5 to about 3.0. <IMAGE>