发明名称 |
BANK BACKWARD COMPATIBILITY CIRCUIT |
摘要 |
PURPOSE: A bank backward compatibility circuit is provided not to change a structure of an SDRAM for a compatibility by separating a bank signal for a row path from a bank signal for a column signal. CONSTITUTION: First and second D flip flops(DFF1,DFF2) receive external address signals(ADD(12),ADD(13)) and output them in synchronism with a synchronous signal. First through fourth NAND gates(NAD1-NAD4) NAND an output and an inverting output of the second D flip flop(DFF2) and output a bank address with respect to a row path through first through fourth inverters. Fifth through eighth NAND gates(NAD 5 -NAD8) NAND an output and an inverting output of the first D flip flop(DFF1) and output a bank address with respect to a column path through fifth through eighth inverters.
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申请公布号 |
KR100300039(B1) |
申请公布日期 |
2001.06.13 |
申请号 |
KR19980012877 |
申请日期 |
1998.04.10 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO., LTD. |
发明人 |
LEE, GYE HYEONG |
分类号 |
G11C11/407;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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