| 摘要 |
In a field-effect semiconductor device, for example a power MOSFET, a body portion separates a channel-accommodating region from a drain region at a surface of a semiconductor body. This body portion includes a drift region which serves for current flow of charge carriers of a first conductivity type from the conduction channel to the drain region, in a conducting mode of the device. Instead of being a single region, the body portion also includes field-relief regions of the second conductivity type, which are depleted together with the drift region in a voltage blocking mode of the device to provide a voltage-carrying space-charge region. The drain region extends at least partially around the body portion at the surface, and the relief regions are located radially in this body portion. |
