Article comprising a dielectric material of Zr-Ge-Ti-O or Hf-Ge-Ti-O and method of making the same

摘要

The invention relates to dielectric materials comprising films of R-Ge-Ti-O where R is selected from Zr and Hf, and to methods of making the same. The dielectric material preferably has the formula Rx-Gey-Tiz-Ow where .05 ≥ x ≤ 1, .05 ≥ y ≤ 1, 0.1 ≥ z ≤ 1, and 1 ≥ w ≤ 2, and x+y+z SIMILAR 1, and more preferably, where .15 ≥ x ≤ 0.7, .05 ≥ y ≤ 0.3, 0.25 ≥ z ≤ 0.7, and 1.95 ≥ w ≤ 2.05, and x+y+z SIMILAR 1. The invention is particularly useful in silicon-chip integrated circuit devices including a capacitor of a dynamic random access memory (DRAM) device.