Mosfet with localized amorphous region with retrograde implantation

摘要

A semiconductor device with improved short channel characteristics is formed with a buried amorphous region comprising a retrograde impurity region having the impurity concentration peak of the semiconductor substrate. The buried amorphous region, formed below the channel region, suppresses diffusion of displaced atoms and holes from the source/drain regions and reduces the resistance against latch-up phenomenon, thereby improving short channel characteristics.