| 摘要 |
A new method is provided for the creation of interfacing and adjacent surfaces when creating damascene interconnects. Under the first embodiment of the invention, the surface area of the Intra Metal Dielectric (IMD) in which the copper metal pattern has been created is partially removed thereby reducing and sub-dividing the surface area of the interfacing surface. Under the second embodiment of the invention, the surface area of the IMD is sub-divided into a multiplicity of squares that now form the interfacing surface area. Under the third embodiment of the invention, the surface area of the Intra Metal Dielectric (IMD) in which the copper metal pattern has been created is essentially removed leaving sidewalls of the IMD material on the formed pattern of copper interconnects.
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