Plasma processing apparatus

摘要

A plasma processing apparatus has a processing chamber in which are provided one or more radio frequency antennas and a grounded opposite electrode positioned opposite to a sample. The radio frequency antenna 7 is formed of a material having no more than {fraction (1/100)} the volume resistivity of a material forming the opposite electrode. The radio frequency antenna may be buried in the opposite electrode, with its surface partially exposed to the plasma. Thus, the apparatus can have an enhanced processing rate and also provide a uniform process.