Negative voltage generating circuit with high control responsiveness which can be formed using transistor with low breakdown voltage and semiconductor memory device including the same

摘要

A voltage generating circuit of the present invention includes a charge pump regulator and a voltage converting circuit. Charge pump regulator receives Ext.Vcc and a ground voltage as inputs and outputs a negative voltage Vbb1. Charge pump regulator receives Int.Vcc and negative voltage Vbb1 as inputs and outputs negative voltage Vbb2(<Vbb1). Voltage converting circuit receives Int.Vcc and negative voltage Vbb2 as inputs and outputs an output voltage Vnn. In each of charge pump regulator, a voltage difference between the input and the output is designed such that it is equal to or lower than a prescribed value determined by a size of a transistor.