| 发明名称 |
Method to protect metal from oxidation during poly-metal gate formation in semiconductor device manufacturing |
| 摘要 |
A method for protecting metal (112) from oxidation during various oxidation steps such as CVD SiO2 oxidation for forming an overlying oxide layer (114), smile oxidation, and sidewall (116) deposition. The gas CO2 is added to the oxidation chemistry. The CO2/H2 ratio is controlled for selective oxidation. The metal (112) is effectively protected from oxidation due to the existence of both H2 and CO2 as strong reduction reagents.
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| 申请公布号 |
US6245605(B1) |
申请公布日期 |
2001.06.12 |
| 申请号 |
US19990369132 |
申请日期 |
1999.08.05 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HWANG MING;HSU WEI-YUNG;CHO CHIH-CHEN;ANDERSON DIRK N. |
| 分类号 |
H01L21/28;H01L21/316;H01L21/321;H01L29/49;(IPC1-7):H01L21/823;H01L21/322;H01L21/320;H01L21/476 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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