| 发明名称 |
Semiconductor device and method for manufacturing the same |
| 摘要 |
An Si semiconductor device has an emitter region, a base region and a collector region formed on a substrate substantially in parallel to a plane of the substrate. And at least one of the emitter region the base region and the collector region includes an SiGe mixed crystal semiconductor region formed by ion implantation of Ge.
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| 申请公布号 |
US6246104(B1) |
申请公布日期 |
2001.06.12 |
| 申请号 |
US19970840897 |
申请日期 |
1997.04.17 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
TSUDA HISANORI;WATANABE HIDENORI |
| 分类号 |
H01L21/331;H01L21/84;H01L29/73;H01L29/735;H01L29/737;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/331 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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