| 摘要 |
PROBLEM TO BE SOLVED: To moderate the thermal gradient between the areas of paired elements formed on an SOI substrate. SOLUTION: A semiconductor device is provided with an element isolation section 4 made of a material having a higher coefficient of thermal conductivity than the buried insulating layer 1b of the SOI substrate 1 between paired bipolar transistors Q1 and Q2 provided on the semiconductor layer lc of the substrate 1.
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