| 摘要 |
PROBLEM TO BE SOLVED: To provide a failure position detecting method in which detection for wire breaking part of a semiconductor device and so on can be performed in a simple operation. SOLUTION: This failure position detecting method includes irradiating an X ray 3 from an X ray source 1 toward a semiconductor device 7, scanning, measuring a current value which flows out from a conductive layer (TEG pattern 8) of the semiconductor device 7 by a current meter 6, and detecting a failure position in the conductive layer. Intensity modulation corresponding to the detected value and display of the intensity modulation value at pixels corresponding to the scanning position of the X ray are preferable.
|
