发明名称 MULTIFILM FOR THIN-FILM CONSTRUCTION, CAPACITOR USING THIS AND METHOD OF MANUFACTURING THEM
摘要 PROBLEM TO BE SOLVED: To provide a multifilm for thin-film construction, a capacitor using this and its manufacturing method. SOLUTION: This invention provides a multifilm having a composition transition layer led into the interface between a lower material layer and an upper material layer which respectively contain material elements whose interaction parameters are different from each other. The composition transition layer contains both forming elements of the upper material layer and the lower material layer, has a concentration gradient from above the lower material layer up to the upper material layer, and the concentration of the elements forming the upper material layer is relatively large at its adjoining part to the upper material layer. A lower material layer or upper material layer like this is made of an oxide or nitride of niobium or tantalum, aluminum, silicon, zirconium, cerium, titanium, and yttrium.
申请公布号 JP2001160557(A) 申请公布日期 2001.06.12
申请号 JP20000320000 申请日期 2000.10.19
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 LIM JAE-SOON;KIN EIKAN;BOKU KOSHU;LEE SANG-IN
分类号 H01L27/04;H01G9/04;H01L21/02;H01L21/31;H01L21/314;H01L21/316;H01L21/318;H01L21/469;H01L21/822;H01L21/8242;H01L27/108;H01L31/119 主分类号 H01L27/04
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