发明名称 |
Fabrication method for a double-side double-crown stacked capacitor |
摘要 |
A method for fabricating a stacked capacitor is described, which is applicable to the fabrication of a capacitor with a double-sided double crown bottom electrode. The first crown structure of the bottom electrode is established by forming a patterned material layer which comprises an opening on the substratae as the framework of the amorphous silicon layer of the bottom electrode. The second crown structure of the bottom electrode is to established on the above amorphous silicon layer by forming an amorphous silicon spacer on the sidewall of another patterned material layer.
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申请公布号 |
US6245633(B1) |
申请公布日期 |
2001.06.12 |
申请号 |
US19990454387 |
申请日期 |
1999.12.03 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LOU CHINE-GIE |
分类号 |
H01L21/02;H01L21/768;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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