| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer surface grinding apparatus to improve the throughput without breaking a wafer. SOLUTION: In the wafer surface grinding apparatus 10, an etching stage 22 is installed on a body 12 comprising a rough grinding stage 18 and a fine grinding stage 20, and the rough grinding, the fine grinding and the etching of the wafer 28 are achieved in the same wafer surface grinding apparatus 10. A chuck 40 holding the wafer 28 is successively moved to the rough grinding stage 18, the fine grinding stage 20 and the etching stage 22 while holding the wafer 28. When the chuck 40 is positioned on the etching stage 22, the chuck 40 is elevated toward an etching tank 25, and the wafer 28 held by the chuck 40 is stored in the etching tank 25. In this condition, an etching solution 92 is fed to the wafer 28 from a nozzle 94 to etch the wafer 28. |
