| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which gate electrodes of an n-channel field-effect transistor and a p-channel field-effect transistor are made of the same material, the transistors constituting a complementary field-effect transistor, and threshold voltages of the electrodes are each reduced sufficiently. SOLUTION: A semiconductor device 101 comprises an n-channel MOSFET 3 and a p-channel MOSFET 41, which form a CMOS structure. A gate electrode 10 of the n-channel MOSFET 3 and a gate electrode 100 of the p-channel MOSFET 41 are made of the same material. At least, a part of a channel region 11 of the n-channel MOSFET 3 is formed in an Si layer 8 on which tensile stress is applied. At least, a part of a channel region 13 of the p-channel MOSFET 41 is formed in an SiGe layer 70. A work function of the material of the gate electrodes 10 and 100 is larger than an energy difference between a vacuum level and a conduction band end of the Si layer 8, on which tensile stress is applied, and is smaller than an energy difference between a vacuum level and a valence band end of the SiGe layer 70.
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