发明名称 SUBSTRATE HOLDING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method and device for plasma treatment by which the amount of contamination transferred from a pedestal to a wafer can be reduced by reducing backside contamination. SOLUTION: A substrate holding device which removes heat from a substrate 1 held on a substrate electrode is provided with a projecting annular substrate holding section 3 provided on the peripheral section of the substrate electrode for holding the substrate 1 on the electrode, another substrate holding section 20 which is provided at a spot inside the holding section 3, and recesses 8 which are provided to form cavities between the holding sections 20 and 3. The holding device is also provided with an electrostatic attracting means which locks the substrate 1 by bringing the backside of the substrate 1 into contact with the holding sections 3 and 20, and a means which has a function of diffusing a heat transferring gas 7 in the recesses 8 provided on the substrate electrode. In addition, a means which supplies the gas 7 to the holding sections 3 and 20 is also provided in a heat transferring gas diffusing section.
申请公布号 JP2001160586(A) 申请公布日期 2001.06.12
申请号 JP20000275626 申请日期 2000.09.11
申请人 HITACHI LTD 发明人 TAMURA NAOYUKI;TAKAHASHI NUSHITO
分类号 H05H1/46;C23C14/50;C23C16/458;H01L21/203;H01L21/205;H01L21/302;H01L21/3065;H01L21/68;H01L21/683 主分类号 H05H1/46
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