发明名称 Method of filling an opening in an insulating layer
摘要 The present invention is about a method for filling an opening in an insulating layer in a fast and highly reliable way and can be used to fill openings such as trenches and via holes simultaneously. This method is based on the principle of reaction enhanced wetting and simultaneous seed layer formation. The idea is, in contrast to trying to avoid the TiAl3 formation, to use this reaction to its advantage for the creation of an ultra-thin continuous Al-containing seed layer. The latter allows a bottom to top fill during the subsequent Al-containing metal deposition. As a consequence, the filling process proceeds much faster and is production worthy.
申请公布号 US6245653(B1) 申请公布日期 2001.06.12
申请号 US19990275922 申请日期 1999.03.24
申请人 APPLIED MATERIALS, INC.;INTERUNIVERSITY MICROELECTRONICS CENTER, VZW 发明人 BEYER GERALD;MAEX KAREN;PROOST JORIS
分类号 H01L21/28;H01L21/768;(IPC1-7):H01L21/44 主分类号 H01L21/28
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