Method for making the bottom electrode of a capacitor

摘要

The present invention provides a method for making the bottom electrode of a buried capacitor, which is characterized by protecting the non-bottom electrode region with a LPD oxide layer to prevent the impurities within the doped Si glass remaining in non-bottom electrode region from driving into the substrate during annealing, thus non-desired diffusing region connecting to the bottom electrode will be generated. Consequently, the leakage current existing in conventional buried capacitor will be effectively reduced according to the method of this present invention.