| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory in which switching between high speed access operation and low power consumption operation can be performed. SOLUTION: A word line control circuit 12 is provided so that the word line is started with two different timing in accordance with a state of an external control signal, as a word line is started performing pre-charge at the time of high speed operation, sense operation is started directly after finish of pre- charge, and high speed access can be performed. At the low power consumption, as the word line is started after finish of pre-charge, power consumption can be suppressed. Thus, high speed and low power consumption can be performed by only switching external control signals.</p> |
