| 摘要 |
PROBLEM TO BE SOLVED: To provide a deposition method for forming an interlayer dielectric which has excellent adhesion onto distributing Cu wires, and is free from cohesion of Cu, and so on. SOLUTION: A manufacturing method for semiconductor devices which has a process of performing pretreatment of a silicon board 5 to be performed for enhancing adhesion between a Cu and an insulating film, is a deposition chamber 1 the same as one for depositing an insulating film, and at a temperature lower than a deposition temperature, when the insulating film is formed by CVD on a Cu. |
