| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for heat-treating a semi-insulating GaAs single crystal, capable of obtaining a high-purity semi-insulating GaAs single crystal having slight contamination of heavy metal without using an expensive specific quartz ampule. SOLUTION: In this method for heat-treating the semi-insulating GaAs single crystal by sealing the semi-insulating GaAs single crystal in the quartz ampule and heating the quartz ampule from the outside, a part of the quartz ampule is provided with a low-temperature zone having <=0.9 heat treatment temperature of the semi-insulating GaAs single crystal and the semi-insulating GaAs single crystal is heat-treated.
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