SILICON SEED CRYSTAL, METHOD FOR PRODUCING THE SAME AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal by which the rate for making the crystal dislocation free can be improved in the step for producing the silicon single crystal by a Czochralski method, further to provide a seed crystal usable for the production method, and a method for producing the seed crystal, and especially to extremely improve the rate for making the crystal dislocation free in the method for pulling and growing the single crystal without carrying out dash-necking (seed-tightening). SOLUTION: This silicon seed crystal is the one used when the silicon single crystal is produced by the Czochralski method, and is characterized by an oxide film having >=5 nm thickness, formed on the surface of the seed crystal. The method for producing the seed crystal, and the method for producing the silicon single crystal by using the seed crystal are also provided.