发明名称 Method of producing a wiring for a semiconductor circuit
摘要 The semiconductor circuit device is provided with a first wiring layer connected to a semiconductor substrate through a contact hole in an insulation film formed on a main surface of the semiconductor substrate, and a second wiring layer connected with the first wiring layer through a through-hole in an interlayer insulation film formed on the first wiring layer, wherein the first wiring is substantially flat on the contact hole and the area of the through-hole is smaller than that of the contact hole.
申请公布号 US6245661(B1) 申请公布日期 2001.06.12
申请号 US19940362210 申请日期 1994.12.22
申请人 CANON KABUSHIKI KAISHA 发明人 MATSUMOTO SHIGEYUKI;IKEDA OSAMU
分类号 H01L23/485;H01L23/522;(IPC1-7):H01L21/476 主分类号 H01L23/485
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