发明名称 |
Method of producing a wiring for a semiconductor circuit |
摘要 |
The semiconductor circuit device is provided with a first wiring layer connected to a semiconductor substrate through a contact hole in an insulation film formed on a main surface of the semiconductor substrate, and a second wiring layer connected with the first wiring layer through a through-hole in an interlayer insulation film formed on the first wiring layer, wherein the first wiring is substantially flat on the contact hole and the area of the through-hole is smaller than that of the contact hole.
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申请公布号 |
US6245661(B1) |
申请公布日期 |
2001.06.12 |
申请号 |
US19940362210 |
申请日期 |
1994.12.22 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
MATSUMOTO SHIGEYUKI;IKEDA OSAMU |
分类号 |
H01L23/485;H01L23/522;(IPC1-7):H01L21/476 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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