发明名称 |
Fluorinated hard mask for micropatterning of polymers |
摘要 |
The present invention discloses the formation of a hard mask layer in an organic polymer layer by modifying at least locally the chemical composition of a part of said exposed organic low-k polymer. This modification starts from an exposed surface of the polymer and extends into the polymer thereby increasing the chemical resistance of the modified part of the polymer. As a result, this modified part can be used as a hard mask or an etch stop layer for plasma etching.
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申请公布号 |
US6245489(B1) |
申请公布日期 |
2001.06.12 |
申请号 |
US19980085691 |
申请日期 |
1998.05.27 |
申请人 |
IMEC VZW |
发明人 |
BAKLANOV MIKHAIL RODIONOVICH;VANHAELEMEERSCH SERGE;MAEX KAREN;WAETERLOOS JOOST;DECLERCK GILBERT |
分类号 |
G03F7/09;G03F7/36;G03F7/38;G03F7/40;H01L21/311;H01L21/768;(IPC1-7):G03F7/26 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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