METHOD FOR PRODUCING OXIDE THIN FILM, METHOD FOR PRODUCING MEMORY ELEMENT, METHOD FOR PRODUCING PIEZOELECTRIC ELEMENT AND OXIDE THIN FILM, MEMORY ELEMENT AND PIEZOELECTRIC ELEMENT PRODUCED BY THESE PRODUCTION METHODS

摘要

PROBLEM TO BE SOLVED: To provide a method for producing an oxide thin film capable of easily giving fine crystals, provide a method for producing a memory element or a piezoelectric element using the thin film production method and provide an oxide thin film, a memory element and a piezoelectric element produced by these methods. SOLUTION: A solution of an organometallic compound containing an oxide- forming metal element is used as a starting raw material and the solution is applied to a substrate, dried, calcined and subjected to main baking to form an oxide thin film. In the above process, the calcination is carried out in an atmosphere inert to the organometallic compound. Nitrogen atmosphere is especially preferable as the inert atmosphere. A memory element or a piezoelectric element is produced by using the method for the production of the oxide thin film.