| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for simplifying the control of the profile of the impurity of a pocket area, and for obtaining satisfactory transistor characteristics. SOLUTION: This method for manufacturing a semiconductor device comprises a process for forming a gate insulating film on the surface of a first conductive semiconductor substrate, a process for forming a gate electrode on the gate insulating film, a process for forming an amorphous layer at least on the surface of the semiconductor substrate, a process for forming a pocket area by introducing first conductive impurity into the surface of the semiconductor substrate, and a process for forming a source drain area by introducing second conductive impurity into the surface of the semiconductor substrate.
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