| 摘要 |
PROBLEM TO BE SOLVED: To automatically measure a voltage dependency by a film thickness change of a ferroelectric thin film and also analize a factor caused by the voltage dependency in an evaluation method for the ferrelectric thin film. SOLUTION: In the method, a pulse voltage VB is applied to a material 3 having a ferroelectric thin film 1 by a conductive needle 2 by using an atomic force microscope, the amplitude of the pulse voltage VB is changed by a voltage applying means when a film thickness change of the ferroelectric thin film 1 is measured, and also a detecting output is measured through a lock-in amplifier 4. |
