发明名称 High performance flip-chip semiconductor device
摘要 A flip-chip semiconductor device with generic bump patterns formed on a semiconductor substrate and having optimized electrical performance is provided. In a preferred embodiment, the flip-chip semiconductor device includes a semiconductor substrate on which active elements are formed and which has a surface having a plurality of peripheral portions, the active elements including Input/Output (I/O) circuitry and logic circuitry, a first power supply wiring and a first ground wiring disposed in the semiconductor substrate, a signal wiring disposed in the semiconductor substrate, and a first plurality of bumps arranged on the plurality of peripheral portions and selectively used for coupling the semiconductor substrate to a second substrate. The first plurality of bumps are arranged in a matrix pattern of 6 rows by n columns. Bumps in predetermined locations in the matrix are selectively coupled to the first power supply wiring and the first ground wiring.
申请公布号 US6246121(B1) 申请公布日期 2001.06.12
申请号 US19990290154 申请日期 1999.04.12
申请人 VLSI TECHNOLOGY, INC. 发明人 DANDIA SANJAY;SHENOY JAYARAMA N.
分类号 H01L23/50;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/50
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