发明名称 |
Memory array architecture, method of operating a dynamic random access memory, and method of manufacturing a dynamic random access memory |
摘要 |
A dynamic random access memory includes a plate line; a digit line; a memory cell selectively coupled between the digit line and the plate line; sense circuitry selectively coupled to the memory cell to read the memory cell and capable of applying a first voltage from the plate line to the digit line; equilibration circuitry selectively coupling the plate line to an equilibration voltage less than the first voltage and selectively coupling the digit line to the equilibration voltage; and control circuitry configured to cause the equilibration circuitry to couple the plate line to the equilibration voltage while the memory cell is being accessed. A method of manufacturing a dynamic random access memory includes providing control circuitry configured to operate in a specified manner. A method of operating a dynamic random access memory includes turning on one equilibration transistor, while another equilibration transistor is off, so that a plate line equilibrates to a voltage defined by the equilibration voltage source during accessing of a memory cell.
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申请公布号 |
US6246604(B1) |
申请公布日期 |
2001.06.12 |
申请号 |
US19990353307 |
申请日期 |
1999.07.14 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LOWREY TYLER A. |
分类号 |
G11C11/4074;G11C11/4091;(IPC1-7):G11C11/24 |
主分类号 |
G11C11/4074 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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