发明名称 Economical silicon-on-silicon hybrid wafer assembly
摘要 An economical hybrid wafer utilizing a lower-quality, lower cost transfer substrate to support a higher-quality thin film. A high-quality thin film (2101) is separated from a donor wafer (2100) and bonded to a transfer, or target, substrate (46). The donor wafer is preferably single-crystal silicon optimized for device fabrication, while the transfer substrate provides mechanical support. The thin film is not grown on the transfer substrate, and thus defects in the transfer substrate are not grown into the thin film. A low-temperature bonding process can provide an abrupt junction between the target wafer and the thin film.
申请公布号 US6245161(B1) 申请公布日期 2001.06.12
申请号 US19980026116 申请日期 1998.02.19
申请人 SILICON GENESIS CORPORATION 发明人 HENLEY FRANCOIS J.;CHEUNG NATHAN W.
分类号 B24C1/00;B26F3/00;B26F3/02;B32B5/16;B81C1/00;H01L21/00;H01L21/18;H01L21/20;H01L21/22;H01L21/223;H01L21/265;H01L21/30;H01L21/301;H01L21/302;H01L21/304;H01L21/36;H01L21/38;H01L21/425;H01L21/44;H01L21/46;H01L21/461;H01L21/48;H01L21/50;H01L21/762;H01L21/78;H01L21/8238;(IPC1-7):H01K21/00 主分类号 B24C1/00
代理机构 代理人
主权项
地址