发明名称 |
SURFACE EMISSION SEMICONDUCTOR LASER AND METHOD OF FABRICATION |
摘要 |
PROBLEM TO BE SOLVED: To provide a surface emission semiconductor laser in which the polarization direction of laser light can be controlled and a method of fabrication. SOLUTION: A semiconductor substrate 101 and a resonator 120 have a function for controlling the polarization direction of laser light. The semiconductor substrate 101 and the resonator 120 are bent and applied with anisotropic strain. The polarization direction of laser light in an active layer 105 can be controlled by the anisotropic strain.
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申请公布号 |
JP2001156394(A) |
申请公布日期 |
2001.06.08 |
申请号 |
JP19990339687 |
申请日期 |
1999.11.30 |
申请人 |
SEIKO EPSON CORP |
发明人 |
NISHIDA TETSURO;KONDO TAKAYUKI;KANEKO TAKESHI |
分类号 |
H01S5/183;(IPC1-7):H01S5/183 |
主分类号 |
H01S5/183 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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