SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To improve a MIS transistor in driving force by a method wherein the junction position of an extension high-concentration impurity diffusion layer is set shallow. SOLUTION: A gate electrode 12 is formed on a semiconductor substrate 10 through the intermediary of a gate insulating film 11, and a P-type impurity diffusion layer 13 is formed under the gate electrode 12. N-type extension high- concentration impurity diffusion layers 15 possessed of a shallow junction and N-type high-concentration impurity diffusion layers 14 possessed of a deep junction are each formed on both sides of the P-type impurity diffusion layer 13. First conductivity impurities of large mass are diffused under the extension high-concentration impurity diffusion layers 15, by which a P-type pocket impurity diffusion layer 16 is formed under the impurity diffusion layers 15. The pocket impurity diffusion layer 16 is possessed of a segregation part formed of segregated P-type impurities of large mass such as indium.